GaN Power Device Market Size & Analysis Forecast 2024 To 2032

The global GaN power device market size reached USD 347.5 Million in 2023. The GaN power device market size is expected to reach USD 3,864.9 Million by 2032, exhibiting a growth rate (CAGR) of 29.8% during 2024-2032.

GaN Power Device Market Size 2024 To 2032  

  • The global GaN power device market size reached USD 347.5 Million in 2023.
  • The GaN power device market size is expected to reach USD 3,864.9 Million by 2032, exhibiting a growth rate (CAGR) of 29.8% during 2024-2032.
  • Based on the device type, the market has been divided into power devices (discrete and integrated power devices) and RF power devices (discrete and integrated RF power devices).
  • The market has been segregated based on the voltage range into <200 volt, 200-600 volt and >600 volt.
  • On the basis of the application, the market has been classified into power drives, power supply systems and radio frequency-based systems.
  • Based on the end-use industry, the market has been segmented into telecommunications, automotive, renewable power generation, military, aerospace and defense, consumer electronics, and others.
  • On the geographical front, the market has been categorized into North America (the United States and Canada), Asia Pacific (China, Japan, India, South Korea, Australia, Indonesia and others), Europe (Germany, France, the United Kingdom, Italy, Spain, Russia, and others), Latin America (Brazil, Mexico, and others), and the Middle East and Africa.
  • The growth of the gallium nitride (GaN) power device market is driven by advancements in manufacturing technologies that are reducing production costs and increasing the scalability of GaN-based devices.
  • Additionally, increased investment in research and development by key players is fostering innovation in GaN technology, leading to enhanced device performance and broader applicability.

 

 

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Industry Trends and Drivers:

  • Superior performance characteristics:

GaN power devices offer significant advantages over traditional silicon-based devices. Gallium Nitride exhibits higher electron mobility and a wider bandgap, which allows it to operate at higher voltages, frequencies, and temperatures. These characteristics enable GaN devices to deliver faster switching speeds and lower energy losses, resulting in improved efficiency. This efficiency translates to reduced heat generation, smaller components, and lighter systems, making GaN highly attractive for applications requiring compact and efficient power management solutions.

Furthermore, GaN devices have lower on-resistance and less gate charge, making them ideal for high-frequency and high-voltage applications, where energy savings and operational reliability are critical.

  • Rising demand for energy-efficient solutions:

Global emphasis on energy efficiency and sustainability is driving the adoption of GaN power devices across multiple industries. Governments and organizations worldwide are setting stricter energy efficiency standards to reduce carbon emissions and promote the use of renewable energy sources. GaN devices are key enablers in this transition, particularly in power conversion and power supply applications. They are increasingly used in electric vehicle (EV) charging infrastructure, solar inverters, and data centers, where energy efficiency is paramount. The demand for more efficient power conversion in consumer electronics, such as smartphones and laptops, also boosts the market. GaN-based chargers, for instance, are more compact and efficient, delivering faster charging times while reducing energy consumption.

  • Expanding applications across industries:

The versatility of GaN power devices is fueling their demand across various sectors, including automotive, telecommunications, aerospace, and defense. In the automotive industry, GaN devices are essential for the development of EV powertrains, battery management systems, and charging solutions. In telecommunications, GaN is crucial for 5G base stations and radio frequency (RF) applications due to its ability to handle high power and frequencies.

Aerospace and defense sectors utilize GaN in radar systems, satellite communications, and advanced power electronics, benefitting from its high efficiency and ability to perform in harsh environments. This expanding range of applications continues to drive the demand for GaN power devices across industries.      

GaN Power Device Market Report Segmentation:

Breakup By Device Type:

Power Device

  • Discrete Power Device
  • Integrated Power Device

RF Power Device

  • Discrete RF Power Device
  • Integrated RF Power Device

Based on device type, the market is classified into power device (discrete and integrated power devices) and RF power device (discrete and integrated RF power devices).

Breakup By Voltage Range:

  • <200 Volt
  • 200–600 Volt
  • >600 Volt

On the basis of voltage range, the market is divided into <200 volt, 200–600 volt, and >600 volt.

Breakup By Application:

  • Power Drives
  • Power Supply Systems
  • Radio Frequency Based Systems

Based on the application, the market is categorized into power drives, power supply systems, and radio frequency-based systems.

Breakup By End-Use Industry:

  • Telecommunications
  • Automotive
  • Renewable Power Generation
  • Military
  • Aerospace and Defense
  • Consumer Electronics
  • Others

On the basis of the end-use industry, the market is segmented into telecommunications, automotive, renewable power generation, military, aerospace and defense, consumer electronics, and others.

Breakup By Region:

  • North America
  • Asia Pacific
  • Europe
  • Latin America
  • Middle East and Africa

On a regional basis, the market is segregated into North America (the United States and Canada); Europe (Germany, France, the United Kingdom, Italy, Spain, Russia, and others); Asia Pacific (China, Japan, India, South Korea, Australia, Indonesia, and others); Latin America (Brazil, Mexico, and others); and the Middle East and Africa.

Top GaN Power Device Market Leaders:

The GaN power device market research report outlines a detailed analysis of the competitive landscape, offering in-depth profiles of major companies.

Some of the key players in the market are:

  • Efficient Power Conversion
  • GaN Systems Inc.
  • IQE
  • Koninklijke Philips N.V.
  • MACOM Technology Solutions
  • Microsemi Corporation (Microchip Technology Inc.)
  • Mitsubishi Electric Corporation,
  • Navitas Semiconductor Inc.
  • Qorvo Inc.
  • Sumitomo Electric Industries Ltd.
  • Texas Instruments Incorporated
  • Toshiba Corporation
  • Wolfspeed Inc. (Cree Inc.), etc.

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Key Highlights of the Report:

  • Market Performance (2018-2023)
  • Market Outlook (2024-2032)
  • Market Trends
  • Market Drivers and Success Factors
  • Impact of COVID-19
  • Value Chain Analysis

If you need specific information that is not currently within the scope of the report, we will provide it to you as a part of the customization.

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Alex Smith

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